Physically sound parameterization of incomplete ionization in aluminum-doped silicon
Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+) regions.Aluminum has a rather deep state in the band gap compared read more to boron or phosphorus, causing strong incomplete ionization.In this paper, we considerably improve our recent parameterization [Steinkemper et al., J.Appl.Phys.117