Physically sound parameterization of incomplete ionization in aluminum-doped silicon

Physically sound parameterization of incomplete ionization in aluminum-doped silicon

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Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+) regions.Aluminum has a rather deep state in the band gap compared read more to boron or phosphorus, causing strong incomplete ionization.In this paper, we considerably improve our recent parameterization [Steinkemper et al., J.

Appl.Phys.117, 074504 (2015)].On the one hand, we found a fundamental criterion to further reduce the number of free parameters in seattle seahawks socks our fitting procedure.

And on the other hand, we address a mistake in the original publication of the incomplete ionization formalism in Altermatt et al., J.Appl.Phys.

100, 113715 (2006).